6 Dec Explore Ovonic Unified Memory with Free Download of Seminar Report and PPT in PDF and DOC Format. Also Explore the Seminar Topics. devices like Phase change memory (PCM), also called as Ovonic Unified Memory with OUM there were various other memory devices like FRAM, MRAM, and. Abstract: The development status of Ovonic Unified Memory (OUM), a phase- change non-volatile semiconductor memory technology for VLSI stand-alone.
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Current memory technologies have a lot of limitations. We are now living mejory a world driven by various electronic equipments. As stated, revising the memory technology fields ruled by silicon technology is of great importance. Memkry this one degree further, Macronix pioneered cross-point PRAM, which is composed simply of a self-aligned chalcogenide cell sandwiched between the address lines that is, with no transistor or diode selection element.
In the September issue of Electronics Magazine, Gordon Moore – co-founder of Intel – published an article on the technology. Preliminary results on send-ahead packaged parts indicate full functionality of the 64 kbit memory arrays.
Current commercial technologies do not satisfy the density, radiation tolerance, or endurance requirements for space applications. In this manner, the chalcogenide serves as the rectifying element so the low-resistance crystalline state is never used. Next Generation Memories satisfy all of the good attributes of memory. But now we are entering an era ovonoc material limited scaling.
Ovonic Unified Memory Full Seminar Report, abstract and Presentation download
The most important one among them is their ability to support expansion in three-dimensional spaces. This phase change technology uses a thermally activated, rapid, reversible change in the structure of the alloy to store data.
RAM is high cost and volatile. These memory technologies when needed to expand will allow expansion only two-dimensional space.
Ubified will not allow stacking of one memory chip over the other. FRAM memory cells do not wear out until they have been read nemory written to billions of times, while MRAM and OUM would require the addition of six to eight “masking” layers in the chip manufacturing process, just like Flash, FRAM might require as little as two extra layers. To make it crystalline, it is heated to just below its melting point and held there for approximately 50ns, giving the atoms time to position themselves in their crystal locations.
PRAM can be constructed in a number of different ways but there are two notable methods. More recently, interest uniied research have resumed as flash and DRAM memory technologies are expected to encounter scaling difficulties as chip lithography shrinks. However, this trend is not likely to continue indefinitely beyond the semiconductor technology roadmap. MRAM is built on top of silicon circuitry. Measuring resistance changes in the cell compared to a reference performs reading data.
However, these emerging research technologies will be faced with an uphill technology challenge.
Ovonic Unified Memory
The new memory technologies have got all the good attributes for an ideal memory. Intel, the biggest maker of computer processors, is also the largest maker of flash-memory chips is trying to combine the processing features and space requirements feature and several next generation memories are being studied in this perspective.
Electrical energy heat is used to convert the material between crystalline conductive and amorphous resistive phases and the resistive property of these phases is used to represent 0 s and 1 s.
Then mail to us immediately to get the full report. The thin-film material is a phase-change chalcogenide alloy similar to the film used to store information on commercial CD-RW and DVD-RAM optical disks, based on proprietary technology originally developed by and exclusively licensed from Energy Conversion Devices. FeRAM works on the basis of the bistable nature of the centre ovoic of selected crystalline material. Unifieed states are programmed by the application of a current pulse through a MOSFET, which ovonc the memory cell into a high or low resistance state, depending on current magnitude.
The OUM uses the reversible structural phase-change in thin-film material e. Semiconductors form the fundamental building blocks of the modern electronic world providing the brains and the memory of products all around us from washing machines to super computers. Passing currents nearby or through the magnetic structure creates the magnetic fields applied to each cell. MRAMs ogonic based on the magnetoresistive effects in magnetic materials and structures that exhibit a resistance change when an external magnetic field is applied.
The base of the heater is connected to a diode. The different conductivity States represent bits of information. A memory cell consists of a top electrode, a layer of the chalcogenide, and a resistive heating element. Ovonic unified memory — its name is derived from ”Ovshinsky” and ”electronic”.
Thermal insulators are also attached to the memory structure in order to avoid data lose due to destruction of material at high temperatures. OUM requires fewer steps in an IC manufacturing process resulting in reduced cycle times, fewer mrmory, and greater manufacturing flexibility.
Further characterization of the ADTC wafers and packaged devices from the CTCV wafers will include chalcogenide material-specific studies, such as write cycle endurance a.
Since the binary information is represented by two different phases uniied the material uinfied is inherently non-volatile, requiring no energy to keep the material in either of its two stable structural states.
This requires a charge pump for producing the charges required for writing into the memory cell. OUM is a ovonicc of nonvolatile memory, which uses chalcogenide materials for storage of binary data. And if promises to integrate easily ovonid the industry’s existing chip manufacturing ovohic. Measuring resistance changes in the cell performs the function of reading data.
Are you interested in this topic. The fundamental idea of all these technologies is the bistable nature possible for of the selected material. FRAM relies on the polarization of what amount to tiny magnets inside certain materials like perouikite, from basaltic rocks. If scaling is to continue to and below the 65nm node, alternatives to CMOS designs will be needed to provide a path to device scaling beyond the end of the roadmap.